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DG411L/412L/413L
Vishay Siliconix
Precision Monolithic Quad SPST Low-Voltage CMOS Analog Switches
FEATURES
D 2.7- thru 12-V Single Supply or "3- thru "6-Dual Supply D On-Resistance--r DS(on): 17 W D Fast Switching--tON: 19 ns --tOFF: 12 ns D TTL, CMOS Compatible D Low Leakage: 0.25 nA D 2000-V ESD Protection
BENEFITS
D D D D Widest Dynamic Range Low Signal Errors and Distortion Break-Before-Make Switching Action Simple Interfacing
APPLICATIONS
D D D D D D D Precision Automatic Test Equipment Precision Data Acquisition Communication Systems Battery Powered Systems Computer Peripherals SDSL, DSLAM Audio and Video Signal Routing
DESCRIPTION
The DG411L/412L/413L are low voltage pin-for-pin compatible companion devices to the industry standard DG411/412/413 with improved performance Combining high speed (tON: 19 ns), flat rDS(on) over the analog signal range (5 W), minimal insertion lose (-3 dB at 280 MHz), and excellent crosstalk and off-isolation performance (-50 dB at 50 MHz), the DG411L/412L/413L are ideally suited for audio and video signal switching. The DG411L and DG412L respond to opposite control logic as shown in the Truth Table. The DG413L has two normally open and two normally closed switches.
Using BiCMOS wafer fabrication technology allows the DG411L/412L/413L to operate on single and dual supplies. Single supply voltage ranges from 3 to 12 V while dual supply operation is recommended with "3 to "6 V.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG411L/412L
TSSOP and SOIC IN1 D1 S1 VGND S4 D4 IN4 1 2 3 4 5 6 7 8 Top View 16 15 14 13 12 11 10 9 IN2 D2 S2 V+ VL S3 D3 IN3
TRUTH TABLE
Logic
0 1
DG411L
ON OFF Logic "0" v 0.8 V Logic "1" w 2.4 V
DG412L
OFF ON
Document Number: 71397 S-21452--Rev. C, 26-Aug-02
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DG411L/412L/413L
Vishay Siliconix
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG413L
Dual-In-Line and SOIC
IN1 D1 S1 VGND S4 D4 IN4
1 2 3 4 5 6 7 8 Top View
16 15 14 13 12 11 10 9
IN2 D2 S2 V+ VL S3 D3 IN3
TRUTH TABLE
Logic
0 1
SW1, SW4
OFF ON
SW2, SW3
ON OFF
Logic "0" v 0.8 V Logic "1" w 2.4 V
ORDERING INFORMATION
Temp Range DG411L/412L
DG411LDY 16-Pin Narrow SOIC -40 to 85_C _ 16-Pin TSSOP DG412LDY DG411LDQ DG412LDQ
Package
Part Number
DG413L
-40 to 85_C _ 16-Pin Narrow SOIC 16-Pin TSSOP DG413LDY DG413LDQ
ABSOLUTE MAXIMUM RATINGS
V+ to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 TO 13 V GND to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 V VL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (GND -0.3 V) to (V+) +0.3 V
I a, N
Power Dissipation (Package)b 16-Pin TSSOPc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450 mW 16-Pin SOICd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 650 mW Notes: a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 7 mW/_C above 75_C d. Derate 7.6 mW/_C above 75_C
VS, VD . . . . . . . . . . -0.3 to (V+ +0.3 V) or 30 mA, whichever occurs first
Continuous Current (Any Terminal) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA Peak Current, S or D (Pulsed 1 ms, 10% Duty Cycle) . . . . . . . . . . . . 100 mA Storage Temperature (DQ, DY Suffix) . . . . . . . . . . . . . . -65 to 125_C
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Document Number: 71397 S-21452--Rev. C, 26-Aug-02
DG411L/412L/413L
Vishay Siliconix
SPECIFICATIONSa (SINGLE SUPPLY 12 V)
Test Conditions Unless Specified Parameter Analog Switch
Analog Signal Rangee Drain-Source On-Resistance Switch Off Leakage Current Channel On Leakage Current VANALOG rDS(on) IS(off) VD = 1/11 V, VS = 11/1 V ID(off) ID(on) VS = VD = 11/1 V V+ = 10.8 V, V- = 0 V IS = 10 mA, VD = 2/9 V Full Room Full Room Full Room Full Room Full -1 -10 -1 -10 -1 -10 0 20 12 30 40 1 10 1 10 1 10 nA V W
Limits
-40 to 85_C
Symbol
V+ = 12 V, V- = 0 V VL = 5 V, VIN = 2.4 V, 0.8 Vf
Tempb
Mind
Typc
Maxd
Unit
Digital Control
Input Current, VIN Low Input Current, VIN High IIL IIH VIN Under Test = 0.8 V VIN Under Test = 2.4 V Full Full -1 -1 0.01 1 1 mA m
Dynamic Characteristics
Turn-On Time Turn-Off Time Break-Before-Make Time Delay Charge Injectione tON tOFF tD Q OIRR XTALK CS(off) CD(off) CD(on) f = 1 MHz RL = 300 W , CL = 35 pF VS = 5 V See Figure 2 DG413L Only, VS = 5 V RL = 300 W , CL = 35 pF Vg = 0 V, Rg = 0 W , CL = 10 nF RL = 50 W , CL = 5 pF, f = 1 MHz Room Full Room Full Room Room Room Room Room Room Room 20 12 50 60 30 40 ns
6 5 71 95 5 6 15 pF dB pC
Off Isolatione Channel-to-Channel Crosstalke Source Off Capacitancee Drain Off Capacitancee Channel On Capacitancee
Power Supplies
Positive Supply Current Negative Supply Current Logic Supply Current Ground Current I+ IVIN = 0 or 5 V IL IGND Room Full Room Full Room Full Room Full -1 -5 -1 -5 0.02 -0.002 0.002 -0.002 1 5 mA m 1 5
SPECIFICATIONSa (DUAL SUPPLY "5 V)
Test Conditions Unless Specified Parameter Analog Switch
Analog Signal Rangee Drain-Source On-Resistance Switch Off Leakage Currentg Channel On Leakage Currentg Document Number: 71397 S-21452--Rev. C, 26-Aug-02 VANALOG rDS(on) IS(off) ID(off) ID(on) V+ = 5 V, V- = -5 V IS = 10 mA, VD = "3.5 V V+ = 5.5 V, V- = -5.5 V VD = "4.5 V, VS = #4.5 V V+ = 5.5 V, V- = -5.5 V VS = VD = "4.5 V Full Room Full Room Full Room Full Room Full -1 -10 -1 -10 -1 -10 -5 20 5 33 40 1 10 1 10 1 10 www.vishay.com nA V W
Limits
-40 to 85_C
Symbol
V+ = 5 V, V- = -5 V VL = 5 V, VIN = 2.4 V, 0.8 Vf
Tempb
Mind
Typc
Maxd
Unit
3
DG411L/412L/413L
Vishay Siliconix
SPECIFICATIONSa (DUAL SUPPLY "5 V)
Test Conditions Unless Specified Parameter Digital Control
Input Current, VIN Lowe Input Current, VIN Highe IIL IIH VIN Under Test = 0.8 V VIN Under Test = 2.4 V Full Full -1 -1 0.05 0.05 1 1 mA m
Limits
-40 to 85_C
Symbol
V+ = 5 V, V- = -5 V VL = 5 V, VIN = 2.4 V, 0.8 Vf
Tempb
Mind
Typc
Maxd
Unit
Dynamic Characteristics
Turn-On Timee Turn-Off Timee Break-Before-Make Time Delaye Charge Injectione tON tOFF tD Q OIRR XTALK CS(off) CD(off) CD(on) f = 1 MHz RL = 300 W , CL = 35 pF VS = "3.5 V See Figure 2 DG413L Only, VS = 3.5 V RL = 300 W , CL = 35 pF Vg = 0 V, Rg = 0 W , CL = 10 nF RL = 50 W , CL = 5 pF, f = 1 MHz Room Full Room Full Room Room Room Room Room Room Room 21 16 50 60 35 40 ns
6 5 68 85 9 9 20 pF dB pC
Off Isolatione Channel-to-Channel Crosstalke Source Off Capacitancee Drain Off Capacitancee Channel On Capacitancee
Power Supplies
Positive Supply Currente Negative Supply Currente Logic Supply Currente Ground Currente I+ IVIN = 0 or 5 V IL IGND Room Full Room Full Room Full Room Full -1 -5 -1 -5 0.03 -0.002 0.002 -0.002 1 5 mA m 1 5
SPECIFICATIONSa (SINGLE SUPPLY 5 V)
Test Conditions Unless Specified Parameter Analog Switch
Analog Signal Rangee Drain-Source On-Resistancee VANALOG rDS(on) V+ = 4.5 V, IS = 5 mA VD = 1 V, 3.5 V Full Room Full 35 5 50 75 V W
Limits
-40 to 85_C
Symbol
V+ = 5 V, V- = 0 V VL = 5 V, VIN = 2.4 V, 0.8 Vf
Tempb
Mind
Typc
Maxd
Unit
Dynamic Characteristics
Turn-On Timee Turn-Off Timee Break-Before-Make Time Delaye Charge Injectione tON tOFF tD Q RL = 300 W , CL = 35 pF VS = 3.5 V, See Figure 2 DG413L Only, VS = 3.5 V, RL = 300 W , CL = 35 pF Vg = 0 V, Rg = 0 W , CL = 10 nF Room Hot Room Hot Room Room 27 15 50 60 30 40 ns
6 0.5 pC
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Document Number: 71397 S-21452--Rev. C, 26-Aug-02
DG411L/412L/413L
Vishay Siliconix
SPECIFICATIONSa (SINGLE SUPPLY 5 V)
Test Conditions Unless Specified Parameter Power Supplies
Positive Supply Currente Negative Supply Currente Logic Supply Currente Ground Currente I+ IVIN = 0 or 5 V IL IGND Room Hot Room Hot Room Hot Room Hot -1 -5 -1 -5 0.02 -0.002 0.002 -0.002 1 5 mA m 1 5
Limits
-40 to 85_C
Symbol
V+ = 5 V, V- = 0 V VL = 5 V, VIN = 2.4 V, 0.8 Vf
Tempb
Mind
Typc
Maxd
Unit
SPECIFICATIONSa (SINGLE SUPPLY 3 V)
Test Conditions Unless Specified Parameter Analog Switch
Analog Signal Rangee Drain-Source On-Resistance Switch Off Leakage Currentg Channel On Leakage Currentg VANALOG rDS(on) IS(off) ID(off) ID(on) V+ = 2.7 V, V- = 0 V IS = 5 mA, VD = 0.5, 2.2 V V+ = 3.3 V, V- = 0 V VD = 1, 2 V, VS = 2, 1 V V+ = 3.3 V, V- = 0 V VS = VD = 1, 2 V Full Room Full Room Full Room Full Room Full -1 -10 -1 -10 -1 -10 0 65 3 80 100 1 10 1 10 1 10 nA V W
Limits
-40 to 85_C
Symbol
V+ = 3 V, V- = 0 V VL = 3 V, VIN = 0.4 Vf
Tempb
Mind
Typc
Maxd
Unit
Digital Control
Input Current, VIN Low Input Current, VIN High IIL IIH VIN Under Test = 0.4 V VIN Under Test = 2.4 V Full Full -1 -1 0.005 0.005 1 1 mA m
Dynamic Characteristics
Turn-On Time Turn-Off Time Break-Before-Make Time Delay Charge Injectione Off Isolatione Channel-to-Channel Crosstalke Source Off Capacitancee Drain Off Capacitancee Channel On Capacitancee tON tOFF tD Q OIRR XTALK CS(off) CD(off) CD(on) f = 1 MHz RL = 300 W , CL = 35 pF VS = 1.5 V See Figure 2 DG413L Only, VS = 1.5 V RL = 300 W , CL = 35 pF Vg = 0 V, Rg = 0 W , CL = 10 nF RL = 50 W , CL = 5 pF, f = 1 MHz Room Full Room Full Room Room Room Room Room Room Room 50 30 85 110 60 85 ns
6 1 68 85 6 6 20 pF dB pC
Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25_C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. g. Leakage parameters are guaranteed by worst case test conditions and not subject to test. Document Number: 71397 S-21452--Rev. C, 26-Aug-02 www.vishay.com
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DG411L/412L/413L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
rDS(on) vs. Drain Voltage (Single Supply)
100 50 V+ = 5 V V- = 0 V r DS(on) - On-Resistance ( W ) 80 VCC = 2.7 V 60 r DS(on) - On-Resistance ( W ) 40 A B 30 C D 20 A-125 _C B-85 _C C-40 _C D-25 _C
rDS(on) vs. Drain Voltage and Temperature (Single Supply)
40
VCC = 4.5 V
20
VCC = 12 V
10
0 0 3 6 Drain Voltage (V) 9 12
0 0 1 2 3 4 5 Drain Voltage (V)
rDS(on) vs. Drain Voltage and Temperature (Dual Supply)
35 V" = "5 V r DS(on) - On-Resistance ( W ) 28 Supply Current (nA) A 21 B C 14 A-125 _C B-85 _C C-40 _C D-25 _C -5 -3 -1 1 3 5 D 0.25 0.30
Supply Current vs. Temperature
V+ = 5 V V- = 0 V
0.20
0.15
0.10
7
0.05
0 Drain Voltage (V)
0.00 -50
-25
0
25
50
75
100
125
150
Temperature (_C)
Leakage Current vs. Analog Voltage (Dual Supply)
30 V+ = 5 V V- = -5 V 40 Switching Speed (nS) 50
Switching Time vs. Single Supply
I S , I D Leakage Current (pA)
20
tON 30
10 ID(on) 0 IS(off) ID(off)
20
tOFF
-10
-20
10
-30 -5 -3 -1 1 3 5
0 0 3 6 9 12 15
VD or VS - Drain-Source Voltage www.vishay.com
V+ - Positive Supply Voltage (V) Document Number: 71397 S-21452--Rev. C, 26-Aug-02
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DG411L/412L/413L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Switching Time vs. Dual Supply
45 6
Charge Injection vs. Drain Voltage
36 Switching Speed (nS) 4 Charge Injection (Q) 27 tOFF tON VSUPPLY = "5 V 2 VSUPPLY = 3 V 0 9
18
0 2.5
-2 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 -5 -3 -1 1 3 5 V" Positive Supply Voltage (V) Drain Voltage (V)
Input Threshold vs. Single Supply Voltage
1.8 7 6 5 4 3 2 0.3 1 0 0 2 4 6 8 10 12 14 0
Drain Capacitance vs. Drain Voltage (Single Supply)
1.5 V TH - Threshold (V) Capacitance (pF)
CD(off) @ VCC = 5 V CD(off) @ VCC = 12 V CD(off) @ VCC = 3 V
1.2
0.9
0.6
0.0 V" Positive Supply Voltage (V)
3
6 VD - Drain Voltage (V)
9
12
Capacitance vs. Analog Signal (Dual Supply)
25 VSUPPLY = "5 V 20 Capacitance (pF) CD(on) 10 -10
Insertion Loss, Off Isolation and Crosstalk vs. Frequency (Single Supply)
-30 15 Loss (dB)
V+ = 3 V V- = 0 V RL = 50 W
Insertion Loss -3 dB = 280 MHz
-50
Off Isolation
10 -70 CS/CD(off) 5 -90 0 -5 -3 -1 1 3 5 Crosstalk
-1 10 0.1 1 10 Frequency (MHz) 100 1000 Analog Voltage (V)
Document Number: 71397 S-21452--Rev. C, 26-Aug-02
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DG411L/412L/413L
Vishay Siliconix
SCHEMATIC DIAGRAM (TYPICAL CHANNEL)
V+
S VL VVIN Level Shift/ Drive V+ GND D
V-
FIGURE 1.
TEST CIRCUITS
VL V+ Logic Input 3V 50% 0V VL VS S IN GND VRL 300 W CL 35 pF Switch Output Switch Input* 0V tON VO -V S 90% V+ D VO Switch Input* VS VO tON tr <20 ns tf <20 ns
90%
VCL (includes fixture and stray capacitance) VO = VS RL RL + rDS(on)
Note:
Logic input waveform is inverted for switches that have the opposite logic sense control
FIGURE 2. Switching Time
VL
V+ Logic Input 3V 50% 0V VS1 VO1 Switch Output 0V VS2 VO2 0V
VS1 VS2
S1 IN1 S2 IN2 GND V-
D1 D2 VO2
VO1
90%
RL1 300 W RL2 300 W CL2 35 pF
CL1 35 pF Switch Output
90%
tD
tD
VCL (includes fixture and stray capacitance)
FIGURE 3. Break-Before-Make (DG413L)
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Document Number: 71397 S-21452--Rev. C, 26-Aug-02
DG411L/412L/413L
Vishay Siliconix
TEST CIRCUITS
VL V+ VO Rg VL S IN 3V GND VINX VV+ D CL 10 nF OFF ON Q = DVO x CL OFF VO INX OFF ON OFF DVO
Vg
INX dependent on switch configuration Input polarity determined by sense of switch.
FIGURE 4. Charge Injection
VL C VL VS Rg = 50 W 0V, 2.4 V S2 NC 0V, 2.4 V IN2 GND VS VO S1 IN1
V+ C V+ D1 50 W
D2 RL VC
VO
XTALK Isolation = 20 log C = RF bypass
V-
FIGURE 5. Crosstalk
VL C VL VS Rg = 50 W 0V, 2.4 V IN S
V+ V+
C
VL VO C VL RL 50 W
V+
D
C
V+
S Meter
GND
V-
C 0 V, 2.4 V
IN
D VGND Off Isolation = 20 log C = RF Bypass VS VO VVC
HP4192A Impedance Analyzer or Equivalent
FIGURE 6. Off Isolation
FIGURE 7. Source/Drain Capacitances
Document Number: 71397 S-21452--Rev. C, 26-Aug-02
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